Resistive random-access memory
![Filament forming: A 50 nm × 50 nm RRAM cell by Crossbar shows the instance of filament forming when the current abruptly increases beyond a certain voltage. A transistor is often used to limit current to prevent a runaway breakdown following the filament formation.](/Images/godic/202502/07/I-V_of_filamentary_RRAM4614.png")
Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. This technology bears some similarities to CBRAM and phase-change memory (PCM).