横向扩散金属氧化物半导体（英语：Laterally Diffused Metal Oxide Semiconductor，缩写：LDMOS）经常被用于微波/射频电路，制造于高浓度掺杂硅基底的外延层上。

LDMOS常被用于制作基站的射频功率放大器，原因是它可以满足高输出功率、栅源击穿电压大于60伏的要求。与其他器件（如GaAs场效应管）相比，LDMOS功放极大值的频率相对较小。LDMOS技术的生产制造商包括TSMC、GLOBALFOUNDRIES、VIS、英飞凌、RFMD、Freescale Semiconductor等。

LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on p/p silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles. As an example, The drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.