砷化铟是一种无机化合物，化学式InAs，是一种半导体材料。它是灰色的立方晶体，熔点942 °C。

砷化铟是立方ZnS结构，没有对称中心，所以[111]和[]晶面是不等价的。

Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.

Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.