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词汇 Band theory
分类 英语词汇 英语翻译词典
释义

Band theory

中文百科

能带结构 Electronic band structure

（重定向自Band theory）
Si, Ge, GaAs 和 InAs 的能带结构，该结果由紧束缚模型得到。Si和Ge是间接带隙半导体，GaAs和InAs是直接带隙半导体.

在固体物理学中，固体的能带结构 （又称电子能带结构）描述了禁止或允许电子所带有的能量，这是周期性晶格中的量子动力学电子波衍射引起的。材料的能带结构决定了多种特性，特别是它的电子学和光学性质。

英语百科

Electronic band structure 能带结构

（重定向自Band theory）
Animation of band formation and how electrons fill them in a metal and an insulator
Brillouin zone of a face-centered cubic lattice showing labels for special symmetry points.
Band structure plot for Si, Ge, GaAs and InAs generated with tight binding model. Note that Si and Ge are indirect band gap materials, while GaAs and InAs are direct.
Filling of the electronic states in various types of materials at equilibrium. Here, height is energy while width is the density of available states for a certain energy in the material listed. The shade follows the Fermi–Dirac distribution (black=all states filled, white=no state filled). In metals and semimetals the Fermi level EF lies inside at least one band. In insulators and semiconductors the Fermi level is inside a band gap; however, in semiconductors the bands are near enough to the Fermi level to be thermally populated with electrons or holes.

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energies that an electron within the solid may have (called energy bands, allowed bands, or simply bands) and ranges of energy that it may not have (called band gaps or forbidden bands).

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