有机金属化学气相沉积法(MOCVD, Metal-organic Chemical Vapor Deposition)，是在基板上成长半导体薄膜的一种方法。
其他类似的名称如：MOVPE (Metal-organic Vapor-Phase Epitaxy)、OMVPE (Organometallic Vapor-Phase Epitaxy)及OMCVD (Organometallic Chemical Vapor Deposition)等等，其中的前两个字母 "MO" 或是 "OM"，指的是半导体薄膜成长过程中所采用的反应源(precusor)为金属化合物 "Metal-organic" 或是有机金属化合物。而后面三个字母 "CVD" 或是 "VPE"，指的是所成长的半导体薄膜的特性是属于非晶形薄膜或是具有晶形的薄膜。一般而言，"CVD" 所指的是非晶形薄膜的成长，这种成长方式归类于 "沉积"(Deposition)；而"VPE"所指的是具有晶形的薄膜成长方式，这种方式归类于"磊晶"(Epitaxy)。

Metalorganic vapour phase epitaxy (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single or polycrystalline thin films. It is a highly complex process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular beam epitaxy (MBE) the growth of crystals is by chemical reaction and not physical deposition. This takes place not in a vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys , and it has become a major process in the manufacture of optoelectronics.