Molecular beam epitaxy 分子束外延
![A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system](/Images/godic/202501/27/MBE1218.png")
![分子束外延系统的示意图](/Images/godic/202501/27/MBE.svg1218.png")
![Aparataje experimental para crecimiento epitexial por haces moleculares.](/Images/godic/202501/27/Molecular-beam_epitaxy_system_at_LAAS_05161218.jpg")
![Système d'épitaxie par jets moléculaires au laboratoire d'analyse et d'architecture des systèmes à Toulouse (France)](/Images/godic/202501/27/Molecular-beam_epitaxy_system_at_LAAS_05091218.jpg")
Molecular beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho. MBE is widely used in the manufacture of semiconductor devices, including transistors for cellular phones and WiFi.