Grown-junction transistor
（重定向自Grown junction transistor）
![A silicon NPN grown-junction transistor with the cover removed to show the silicon ingot and the base wire.](/Images/godic/202501/16/Grown-junction_NPN_transistor_type_ST20105422.png")
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948 (patent filed June 26, 1948), six months after the first bipolar point-contact transistor. The first germanium prototypes were made in 1949. Bell Labs announced Shockley’s grown-junction transistor on July 4, 1951.