| 释义 |
gallium phosphide semiconductor
- 磷化物lín huà wù
phosphide
- 镓jiā
gallium; Ga
- 半导体器件bàn dǎo tǐ qì jiàn
semiconductor device; semiconductor apparatus
- 窄禁带半导体zhǎi jìn dài bàn dǎo tǐ
narrow bandgap semiconductor
- 磷化铟lín huà yīn
InP(indium phosphide)
- 氮化镓dàn huà jiā
gallium nitride
- 砷化镓shēn huà jiā
gallium arsenide
- 半导体bàn dǎo tǐ
semiconductor
- 锗半导体zhě bàn dǎo tǐ
germanium semiconductor
- 半导体物理bàn dǎo tǐ wù lǐ
semiconductor physics
- 掺杂半导体chān zá bàn dǎo tǐ
doped semiconductor
- 族半导体zú bàn dǎo tǐ
group iii v semiconductor
- 锗半导体三极管zhě bàn dǎo tǐ sān jí guǎn
germanium semiconductor triode
- 砷化镓激光二极管shēn huà jiā jī guāng èr jí guǎn
gallium arsenide laser diode; gaas laser diode
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